Samsung is showcasing a large assortment of representation and retention technologies astatine its booth astatine the Future of Memory and Storage (FMS) 2026 lawsuit successful Santa Clara, California.
Thirteen years aft it introduced the archetypal V-NAND technology, Samsung is the archetypal to unveil V10 of BV-NAND (Bonded V-NAND). This is simply a flash representation that has much than 400 layers and leverages Samsung’s precocious bonding exertion to stack representation cells.
V10 increases representation density by astir 58% compared to the erstwhile V9. The higher furniture number gives V10 amended read, constitute and I/O performance. It besides improves powerfulness efficiency.
Samsung started shipping HBM4E samples to customers a fewer months agone and it besides presented HBM5 astatine FMS, which is the adjacent large manufacture modular for High Bandwidth Memory (HBM).
However, Samsung besides has a proprietary solution called zHBM, which promises astir 8 times the show of HBM5. This excessively relies connected Samsung’s wafer bonding expertise and tin execute 10x the representation density of HBM5 portion tripling the vigor efficiency.
zHBM is designed to stack connected apical of AI accelerators alternatively of being placed alongside them connected the board. This minimizes the region that information signals request to travel, which is what enables the higher speeds and superior vigor efficiency.
Samsung besides introduced zNAND-O, a next-generation flash representation built connected its V-NAND technology. It is processing 4 and 8 furniture versions and promises precocious abstraction efficiency, improved I/O show and little latency compared to emblematic NAND storage. zNAND-O is aimed astatine borderline AI (closer to the user), portion zHBM is intended for AI grooming and inference successful the cloud.
Additionally, Samsung showcased LPDDR5X-PIM, the industry’s archetypal LPDDR RAM with Processing-In-Memory (PIM). This does immoderate of the information processing wrong the representation itself earlier sending the results to the processor. This improves some bandwidth and powerfulness efficiency.
The keynote presumption during the opening was titled “Driving the Wave of AI Revolution: 3D Innovations successful Memory & Storage Architecture” and was presented by Jin-Yub Lee, Executive Vice President and Head of Flash Product & Technology, and Kyungryun Kim, Vice President and Project Leader of the DRAM Design Team. The keynote laid retired Samsung’s ideas connected however to maximize AI strategy show and powerfulness efficiency.
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